PART |
Description |
Maker |
HYMP112U64CR8-C4 HYMP125U64CR8-C4 HYMP112U64CR8-S5 |
240pin DDR2 SDRAM Unbuffered DIMMs 64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240 ROHS COMPLIANT, DIMM-240 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.5 ns, ZMA240 ROHS COMPLIANT, DIMM-240 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
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http:// Hynix Semiconductor, Inc.
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HMT125R7AFP4C HMT125R7AFP8C HMT31GR7AMP4C HMT151R7 |
DDR3 SDRAM Registered DIMM Based on 1Gb A version 128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, RDIMM-240 512M X 72 DDR DRAM MODULE, DMA240
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Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
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HYS72T128001HFN-3.7-A |
128M X 72 DDR DRAM MODULE, DMA240
|
INFINEON TECHNOLOGIES AG
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HYS72T128320HP-3S-A |
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
|
INFINEON TECHNOLOGIES AG
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HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 200pin Unbuffered DDR2 SDRAM SO-DIMMs
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HYNIX SEMICONDUCTOR INC Hynix Semiconductor, Inc.
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HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, 0.45 ns, PBGA84 128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
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M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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NT1GT64U8HA0B-3C NT1GT64U8HA0F-3C |
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 DIMM-240
|
Nanya Technology, Corp.
|
HYMP512U648-E3/C4 HYMP512U728-E3/C4 HYMP532U646-E3 |
240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb 1st ver. Versatile Miniature Switch, High Performance 64M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 Versatile Miniature Switch, High Performance 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
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Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
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